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Panasonic Electronic Components Datasheet

C4533 Datasheet

2SC4533

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Power Transistors
2SC4533
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
500
500
400
7
6
3
1.2
30
2
Junction temperature
Storage temperature
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Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
400 V
10
8 40
1.0 V
1.5 V
10 MHz
1.0 µs
3.0 µs
0.3 µs
1


Panasonic Electronic Components Datasheet

C4533 Datasheet

2SC4533

No Preview Available !

Power Transistors
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2W)
20
10 (2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
1 TC=–25˚C
125˚C
25˚C
0.3
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
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Cob — VCB
1000
300
IE=0
f=1MHz
TC=25˚C
100
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
6
TC=25˚C
5
IB=500mA
4 400mA
300mA
3 200mA
2 100mA
50mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1000
300
hFE — IC
VCE=5V
100
TC=125˚C
30 –25˚C
25˚C
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=10
(2IB1=–IB2)
10 VCC=200V
TC=25˚C
3
tstg
1
ton
0.3 tf
0.1
0.03
0.01
0
123
Collector current IC (A)
4
2SC4533
VCE(sat) — IC
100
IC/IB=5
30
10 TC=100˚C
25˚C
–25˚C
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Collector current IC (A)
100
fT — IC
100
VCE=10V
f=1MHz
30 TC=25˚C
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
10ms
1 DC
t=1ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C4533
Description 2SC4533
Maker Panasonic Semiconductor
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C4533 Datasheet PDF






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