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Panasonic Electronic Components Datasheet

C3743 Datasheet

2SC3743

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Power Transistors
2SC3743
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q Wide area of safe operation (ASO) with high breakdown voltage
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
900
900
800
7
5
3
1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
13 2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 900V, IE = 0
VEB = 7V, IC = 0
50 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
800
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
6
6
Collector to emitter saturation voltage VCE(sat)
IC = 0.8A, IB = 0.16A
0.6 V
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VBE(sat)
fT
ton
tstg
tf
IC = 0.8A, IB = 0.16A
VCE = 5V, IC = 0.1A, f = 1MHz
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V
1.2 V
4 MHz
1.0 µs
4.0 µs
1.0 µs
1
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Panasonic Electronic Components Datasheet

C3743 Datasheet

2SC3743

No Preview Available !

Power Transistors
80
70
60
50
(1)
40
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC —V CE
5
TC=25˚C
4
IB=600mA
3 400mA
300mA
2 200mA
100mA
1 50mA
20mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VBE(sat) — IC
30
IC/IB=5
10
3
1 TC=–25˚C
0.3 100˚C 25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
hFE — IC
1000
300
100
25˚C
30
TC=100˚C
10
–25˚C
3
1
VCE=5V
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
1 10ms
t=1ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2SC3743
VCE(sat) —I C
IC/IB=5
10
3
1
25˚C
0.3
TC=100˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
ton, tstg, tf — IC
100
30
10
3 tstg
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(2IB1=–IB2)
VCC=250V
TC=25˚C
1
0.3 tf
0.1 ton
0.03
0.01
0
0.4 0.8 1.2 1.6 2.0
Collector current IC (A)
2


Part Number C3743
Description 2SC3743
Maker Panasonic Semiconductor
PDF Download

C3743 Datasheet PDF






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