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Panasonic Electronic Components Datasheet

C1384 Datasheet

Silicon NPN Transistor

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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1384
Silicon NPN epitaxial planar type
For low-frequency power amplication and driver amplication
Complementary to 2SA0684
Features
Package
Low collector-emitter saturation voltage VCE(sat)
Code
Complementary pair with 2SA0684
TO-92L-A1
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open)
VCBO
60
V
Pin Name
1. Emitter
2. Collector
3. Base
Collector-emitter voltage (Base open)
e pe) Emitter-base voltage (Collector open)
c e. d ty Collector current
n d stag tinue Peak collector current
a e cle con Collector power dissipation
lifecy , dis Junction temperature
n u duct typed Storage temperature
VCEO
50
V
VEBO
5
V
IC
1
A
ICP
1.5
A
PC
1
W
Tj
150
°C
Tstg –55 to +150 °C
te ting four Pcroontinued Electrical Characteristics Ta = 25°C±3°C
win dis Parameter
Symbol
Conditions
Min Typ Max
in n s follo laned Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
60
a o lude e, p Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
inc typ Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
5
c tinued ance Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
M is iscon ainten Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 500 mA
85
/D m hFE2 VCE = 5 V, IC = 1 A
50
ce pe, Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
D tenan ce ty Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
ain nan Transition frequency
fT VCB = 10 V, IE = –50 mA, f = 200 MHz
M ainte Collector output capacitance
m (Common base, input open circuited)
Cre VCB = 10 V, IE = 0, f = 1 MHz
0.1
340
0.2 0.4
0.85 1.20
200
11
20
ned Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(pla 2. *1: Pulse measurement
Unit
V
V
V
mA
V
V
MHz
pF
*2: Rank classication
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Publication date : October 2008
SJC00421AED
1


Panasonic Electronic Components Datasheet

C1384 Datasheet

Silicon NPN Transistor

No Preview Available !

2SC1384
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1384_PC-Ta
PC Ta
1.2
1.0
0.8
2SC1384_IC-VCE
IC VCE
1.50
Ta = 25°C
1.25
IB = 10 mA
9 mA
1.00
8 mA
7 mA
2SC1384_IC-IB
IC IB
1.2
VCE = 10 V
Ta = 25°C
1.0
0.8
6 mA
0.6
0.75
5 mA
0.6
4 mA
0.4
0.50
3 mA
0.4
2 mA
0.2
0.25
1 mA
0.2
0
0
40
80
120 160
Ambient temperature Ta (°C)
0
0
2
4
6
8 10
Collector-emitter voltage VCE (V)
0
0 2 4 6 8 10 12
Base current IB (mA)
/ 2SC1383_VCE(sat)-IC
2SC1383_VBE(sat)-IC
2SC1384_hFE-IC
e VCE(sat) IC
c type) 10
IC / IB = 10
n dle stage.ntinued 1
o Ta = 75°C
a elifecyc disc 25°C
n u t ed, 0.1
25°C
te tin urProdtiuncuedtyp 0.01
in n followinngefdodiscon 0.001
s la 0.01
0.1
1
10
de , p Collector current IC (A)
a cod inclu e type 2SC1384_fT-IE
ue nc fT IE
M is ntin tena 200
isco ain TVaC=B
= 10 V
25°C
e/D e, m 160
Dintenancnce typ 120
Ma aintena 80
(planed m 40
VBE(sat) IC
100
IC / IB = 10
10
25°C Ta = −25°C
1
75°C
0.1
0.01
0.01
0.1
1
10
Collector current IC (A)
2SC1384_Cob-VCB
Cob VCB
50
IE = 0
f = 1 MHz
40
Ta = 25°C
30
20
10
hFE IC
600
VCE = 10 V
500
400
300
Ta = 75°C
200
25°C
25°C
100
0
0.01
0.1
1
10
Collector current IC (A)
2SC1384_VCER-RBE
VCER RBE
120
IC = 10 mA
Ta = 25°C
100
80
60
40
20
0
1
10
100
Emitter current IE (mA)
0
1
10
100
Collector-base voltage VCB (V)
0
0.1
1
10
100
Base-emitter resistance RBE (k)
2
SJC00421AED


Part Number C1384
Description Silicon NPN Transistor
Maker Panasonic Semiconductor
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C1384 Datasheet PDF






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