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C1360 - 2SC1360

Key Features

  • 8.6±0.2.
  • High transition frequency fT.
  • Large collector power dissipation PC 13.5±0.5 0.7.
  • +00..23 0.7±0.1.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open) 2SC1360A 60 nc d ge. ed ty Collector-emitter voltage 2SC1360 VCEO 45 (3.2) V sta tinu (Base open) 2SC1360A 60 a e cycle iscon Emitter-base voltage (Collector open) VEBO 4 V life d, d Collector current IC 50.

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Full PDF Text Transcription (Reference)

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Transistors 2SC1360, 2SC1360A Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image 5.9±0.2 Unit: mm 4.9±0.2 ■ Features 8.6±0.2 • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7–+00..23 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage 2SC1360 VCBO 50 V pe) (Emitter open) 2SC1360A 60 nc d ge. ed ty Collector-emitter voltage 2SC1360 VCEO 45 (3.2) V sta tinu (Base open) 2SC1360A 60 a e cycle iscon Emitter-base voltage (Collector open) VEBO 4 V life d, d Collector current IC 50 mA n u duct type Collector power dissipation PC 1 W te tin Pro ed Junction temperature Tj 150 °C four ntinu Storage temperature Tstg −55 to +150 °C 0.45+–00..