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C1226 Datasheet

Silicon NPN Power Transistors

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1226 2SC1226A
DESCRIPTION
·With TO-202 package
·Complement to type 2SA699/699A
APPLICATIONS
·For medium power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25? )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC1226
2SC1226A
Open emitter
VCEO
Collector-emitter voltage
2SC1226
2SC1226A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
TC=25?
Tstg Storage temperature
VALUE
40
50
32
40
5
2
3
0.6
10
150
-55~150
UNIT
V
V
V
A
A
A
W
?
?
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Panasonic Electronic Components Datasheet

C1226 Datasheet

Silicon NPN Power Transistors

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1226 2SC1226A
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2 A
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.2 A
V(BR)CBO
Collector-base
breakdown voltage
2SC1226
2SC1226A
IC=1mA;IE=0
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1226
2SC1226A
IC=10mA; IB=0
ICBO Collector cut-off current
VCB=20V; IE=0
ICEO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
COB Output capacitance
fT Transition frequency
VCE=12V; IB=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IE=0; VCB=5V;f=1MHz
IE=0.5A ; VCB=5V
MIN TYP. MAX UNIT
0.4 1.0
V
1.5 V
40
V
50
32
V
40
1 µA
100 µA
100 µA
50 220
50 pF
150 MHz
u hFE classifications
PQ
R
50-100 80-160 100-220
www.DataSheet.in
2


Part Number C1226
Description Silicon NPN Power Transistors
Maker Panasonic Semiconductor
PDF Download

C1226 Datasheet PDF






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