Datasheet4U Logo Datasheet4U.com

B1030 - 2SB1030

Features

  • q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 30.
  • 60.
  • 25.
  • 50.
  • 7.
  • 1.
  • 0.5 300 150.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A s Features q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 4.0±0.2 Unit: mm 3.0±0.2 15.6±0.5 +0.2 0.45–0.1 0.7±0.1 2.0±0.2 marking 123 1.27 1.27 2.54±0.
Published: |