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2SK3396 - N-Channel MOSFET

Key Features

  • s.
  • Low gate-source cutoff current IGSS.
  • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss 0.33+0.05.
  • 0.02 3 0.10+0.05.
  • 0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° 0.15 min. 0.23+0.05.
  • 0.02 1 2 0 to 0.01 Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Po.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current IGSS • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.