Datasheet4U Logo Datasheet4U.com

2SK3396 Datasheet N-channel MOSFET

Manufacturer: Panasonic

Overview: Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor.

Key Features

  • s.
  • Low gate-source cutoff current IGSS.
  • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss 0.33+0.05.
  • 0.02 3 0.10+0.05.
  • 0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° 0.15 min. 0.23+0.05.
  • 0.02 1 2 0 to 0.01 Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Po.

2SK3396 Distributor & Price

Compare 2SK3396 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Panasonic

Part Number Description
2SK3318 Silicon N-channel power MOSFET
2SK301 N-Channel MOSFET
2SK3022 Silicon N-Channel Power F-MOS FET
2SK3023 Silicon N-Channel Power F-MOS FET
2SK3024 Silicon N-Channel Power F-MOS FET
2SK3025 Silicon N-channel power MOS FET
2SK3026 Silicon N-Channel Power F-MOS FET
2SK3027 Silicon N-Channel Power F-MOS FET
2SK3028 Silicon N-Channel Power F-MOS FET
2SK3029 Silicon N-Channel Power F-MOS FET