2SK1842 Datasheet | Panasonic

Silicon Junction FETs (Small Signal) Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 - 0.3 - 0.05 +0.25 s Features q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 - 0.05 1.9±0.2 +0.2 - 0.05 +0.1 Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature VGSO ID IG PD Tj Tstg - 40 1 10 150 150 - 55 to +150 V m A m A m W °C °C 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): EB s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS IGSS VGDS VGSC | Yfs | Coss - Conditions VDS = 10V, VGS = 0 VGS = - 20V, VDS = 0 IG = - 10µA, VDS = 0 VDS = 10V, ID = 1µA VDS = 10V, VGS = 0, f = 1k Hz VDS = 10V, VGS = 0, f = 1MHz min 30 - 40 typ 0 to...