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2SD973A - Silicon NPN Transistor

Features

  • q q 1.5 1.0±0.1 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150.
  • 55 ~ +150 1cm2 Unit V 1.5 R0.9 R0.9 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC.
  • Tj Tstg VCBO Symbol 0.85 0.55±0.1 1.25±0.05 0.45±0.05 3 2 1 emitter voltage 2SD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q 1.5 1.0±0.1 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V 1.5 R0.9 R0.9 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol 0.85 0.55±0.1 1.25±0.05 0.45±0.
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