2SD2693A - Silicon NPN triple diffusion planar type Transistor
Panasonic
Key Features
s.
Wide safe oeration area.
Satisfactory linearity of forward current transfer ratio hFE.
Low collector-emitter saturation voltage VCE(sat).
Full-pack package which can be installed to the heat sink with one screw. 9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1.
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emi.
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Power Transistors
2SD2693A
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification ■ Features
• Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw.
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.
2SD2693A Datasheet
