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2SD2598 - Silicon NPN Transistor

Datasheet Summary

Features

  • 0.65 max. 1.0 1.0 0.2 Unit nA nA V V V VCE(sat) VBE(sat) fT V V MHz Rank classification Q R 4000 ~ 10000 8000 ~ 20000 Pulse measurement Rank hFE 1 Transistor PC.
  • Ta 2.0 900 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 750 IB=150µA 125µA 100µA 75µA 2SD2598 IC.
  • VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 VCE(sat).
  • IC IC/I.

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Datasheet Details

Part number 2SD2598
Manufacturer Panasonic Semiconductor
File Size 54.18 KB
Description Silicon NPN Transistor
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Full PDF Text Transcription

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Transistor 2SD2598 0.15 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 q q q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.45–0.05 +0.1 +0.1 2.5±0.5 1 2 2.5±0.
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