Overview: Transistor 2SD2598
0.15 Silicon NPN epitaxial planer type darlington
For low-frequency amplification Unit: mm
6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1 q q q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.45–0.05
+0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* (Ta=25˚C)
Ratings 60 50 5 750 500 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max.
0.1 0.45+ – 0.05 (HW type) Internal Connection
C B Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency
*1h FE (Ta=25˚C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE
*1 E Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 0.5mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = VCB = 10V, IE = –50mA, f = 200MHz min typ max 100 100 60 50 5 4000 20000 2.5 3.0 200
*2 14.5±0.
