43A
time: t = 380µsec
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCEO VEBO hFE1 hFE2 VCE(sat).
Silicon NPN triple diffusion planer type Transistor
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Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0±0.2 4.0±0.2
q
Low collector to emitter saturation voltage VCE(sat).
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*1 Measuring
(Ta=25˚C)
Ratings 15 10 10 9 5 750 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
Symbol VCBO VCEO VEBO ICP*1 IC PC Tj Tstg
13.5±0.5
5.1±0.2
s Features
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.
2SD2575 Datasheet
