| Description | Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed... |
| Features |
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 160 140 5 12 7 70 3 150 –55 to +150 Unit V V V A A W 0.7 21.0±0.5 15.0±0.2 ... |
| Datasheet |
 2SD1894 Datasheet - 54.51KB |
