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Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
For power amplification
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
1.5max.
1.1max.
High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 500 400 5 10 6 40 1.
2SD1611 Datasheet
