The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SC5145
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 800 800 500 8 10 5 3 40 1.3 150 –55 to +150 Unit V V V
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.
2SC5145 Datasheet
