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2SC3795A - Silicon NPN Transistor

Features

  • 10.0±0.2 4.2±0.2.
  • High-speed switching 5.5±0.2 2.7±0.2.
  • High collector to base voltage VCBO.
  • Low collector to emitter saturation voltage VCE(sat).
  • Full-pack package which can be installed to the heat sink with one screw I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit / Collector to base 2SC3795 VCBO 14.0±0.5 Solder Dip (4.0) 800 V voltage 2SC3795A 900 e e) Collector to 2SC3795 VCES 800 V c typ emitter voltage 2SC3795A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 I Features 10.0±0.2 4.2±0.2 • High-speed switching 5.5±0.2 2.7±0.2 • High collector to base voltage VCBO • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit / Collector to base 2SC3795 VCBO 14.0±0.5 Solder Dip (4.0) 800 V voltage 2SC3795A 900 e e) Collector to 2SC3795 VCES 800 V c typ emitter voltage 2SC3795A 900 n d tage.
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