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Transistors
2SC2632
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification Complementary to 2SA1124
5.9±0.2
Unit: mm
4.9±0.2
8.6±0.2
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
13.5±0.5 0.7–+00..23
• High collector-emitter voltage (Base open) VCEO
0.7±0.1
• Small collector output capacitance (Common base, input open cir-
cuited) Cob
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
150
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
150
(3.
2SC2632 Datasheet
