2SB1607
Overview
- 9±0.3
- 9±0.2
- 1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings -130 -80 -7 -15 -7 40 2 150 -55 to +150 Unit V V V A A W ˚C ˚C
- 0±0.3
- 0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 7-0.2 +0.5
- 2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
- 6±0.1 0.7±0.1 7° 1 2 3 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
- h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf IC = -3A, IB1 = - 0.3A, IB2 = 0.3A Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -3A IC = -5A, IB = - 0.25A IC = -5A, IB = - 0.25A VCE = -10V, IC = - 0.5A, f = 10MHz 30 0.5 1.5 0.1 -80 45 90 260 - 0.5 -1.5 V V MHz µs µs µs min typ max -10 -50 Unit µA µA V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC - Ta
