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Transistor
2SB1589
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q q q
4.5±0.1 1.6±0.2
1.5±0.1
1.0–0.2
+0.1
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
0.4±0.08 0.5±0.08 1.5±0.1
4.0–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3.0±0.15
(Ta=25˚C)
Ratings –10 –10 –7 –2 –1.
2SB1589 Datasheet
