2SB1255
2SB1255 is Silicon PNP Transistor manufactured by Panasonic.
Features q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 90W Hi Fi output High foward current transfer ratio h FE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <
- 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings
- 160
- 140
- 8
- 12
- 15 100 3 150
- 55 to +150 Unit V V V A A W ˚C ˚C
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
1:Base 2:Collector 3:Emitter TOP- 3 Full Pack Package(a)
Internal Connection
E s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
- h
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO h FE1 h FE2- VCE(sat) VBE(sat) f T ton tstg tf Conditions VCB =
- 160V, IE = 0 VCE =
- 140V, IB = 0 VEB =
- 5V, IC = 0 IC =
- 30m A, IB = 0 VCE =
- 5V, IC =
- 1A VCE =
- 5V, IC =
- 7A IC =
- 7A, IB =
- 7m A IC =
- 7A, IB =
- 7m A VCE =
- 10V, IC =
- 0.5A, f = 1MHz IC...