• Part: 2SB1255
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 74.87 KB
Download 2SB1255 Datasheet PDF
Panasonic
2SB1255
2SB1255 is Silicon PNP Transistor manufactured by Panasonic.
Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 90W Hi Fi output High foward current transfer ratio h FE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < - 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings - 160 - 140 - 8 - 12 - 15 100 3 150 - 55 to +150 Unit V V V A A W ˚C ˚C 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP- 3 Full Pack Package(a) Internal Connection E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time - h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO h FE1 h FE2- VCE(sat) VBE(sat) f T ton tstg tf Conditions VCB = - 160V, IE = 0 VCE = - 140V, IB = 0 VEB = - 5V, IC = 0 IC = - 30m A, IB = 0 VCE = - 5V, IC = - 1A VCE = - 5V, IC = - 7A IC = - 7A, IB = - 7m A IC = - 7A, IB = - 7m A VCE = - 10V, IC = - 0.5A, f = 1MHz IC...