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2SB1255 Silicon PNP Transistor

2SB1255 Description

Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm 15.0±0.3 11.0±0.2 5..

2SB1255 Features

* q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <
* 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings
* 160

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Datasheet Details

Part number
2SB1255
Manufacturer
Panasonic Semiconductor
File Size
74.87 KB
Datasheet
2SB1255_PanasonicSemiconductor.pdf
Description
Silicon PNP Transistor

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Silicon PNP Transistor Panasonic Semiconductor
Panasonic Semiconductor 2SB1255-like datasheet