| Description | Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temp... |
| Features |
q q q q
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –130 –80 –... |
| Datasheet |
 2SB1156 Datasheet - 61.05KB |
