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Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
Unit: mm
4.0±0.2
3.0±0.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
(Ta=25˚C)
Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit
marking
+0.2 0.45–0.1
0.7±0.1
15.6±0.5
Optimum for high-density mounting. Allowing supply with the radial taping.
V
1
2
3
emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V
1.27 1.27
V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
2.54±0.
2SB1030 Datasheet
