43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO.
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Transistor
2SA1128
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
5.0±0.2 4.0±0.2
q q
Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
13.5±0.5
5.1±0.2
s Features
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.
2SA1128 Datasheet
