2SA1124 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer type Transistor Specs

2SA1124 - Silicon NPN epitaxial planer type Transistor

Datasheet Summary

Features

0.45.
0.1 +0.2 V mA mA W ˚C ˚C 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC.
51 TO.
92L Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV.
Conditions VCB =.
100V, IE = 0 IC =.
0.1mA, IB = 0 IE =.

Datasheet Details

Part number	2SA1124
Manufacturer	Panasonic Semiconductor
File Size	36.73 KB
Description	Silicon NPN epitaxial planer type Transistor
Datasheet	2SA1124 Datasheet
Additional preview pages of the 2SA1124 datasheet.

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Full PDF Text Transcription

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Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 5.9± 0.2 Unit: mm 4.9± 0.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –150 –150 –5 –100 –50 1 150 –55 ~ +150 Unit V V 3.2 0.45–0.1 1.27 1.27 +0.2 13.5± 0.5 Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob.

Published: Mar 22, 2005 |