2SA1018
2SA1018 is Silicon PNP Transistor manufactured by Panasonic.
Features q
High collector to emitter voltage VCEO. s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings
- 250
- 200
- 5
- 100
- 70 750 150
- 55 ~ +150 Unit V V V m A m A m W ˚C ˚C
13.5±0.5
- 0.1 1.27
+0.2
- 0.1
+0.2
1 2 3
2.3±0.2
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO- 92 EIAJ:SC- 43A s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICEO VCEO VEBO h FE f T Cob
- Conditions VCE =
- 120V, IB = 0, Ta = 60˚C IC =
- 100µA, IB = 0 IE =
- 1µA, IC = 0 VCE =
- 10V, IC =
- 5m A IC =
- 50m A, IB =
- 5m A VCB =
- 10V, IE = 10m A, f = 200MHz VCB =
- 10V, IE = 0, f= 1MHz min typ max
- 1
Unit µA V V
- 200
- 5 60...
