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2SA0885 - Silicon PNP Transistor

Features

  • s.
  • Output of 3 W can be obtained by a complementary pair with 2SC1846.
  • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5.
  • 0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature St.

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Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −45 −35 −5 −1 −1.5 1.2 5.0 * 0.75±0.1 Unit 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.
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