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2SA0879 - Silicon PNP Transistor

Features

  • s.
  • High collector-emitter voltage (Base open) VCEO 0.7+0.3.
  • 0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating.
  • 250.
  • 200.
  • 5.
  • 70.
  • 100.

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Datasheet Details

Part number 2SA0879
Manufacturer Panasonic
File Size 111.52 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA0879 Datasheet
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Full PDF Text Transcription

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Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −250 −200 −5 −70 −100 1 150 −55 to +150 Unit V V V mA mA W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.45+0.2 –0.1 (1.27) 8.6±0.2 2.54±0.
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