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UP04979 - MOSFET

Key Features

  • br>.
  • High-speed switching.
  • Gate protection diode built-in.
  • Two elements incorporated into one package (Each transistor is separated).
  • Reduction of the mounting area and assembly cost by one half.
  • Basic Part Number.
  • 2SJ0672 + 2SK3539.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Tr1 Drain-source surrender voltage VDSS 50 Gate-source voltage (Drain open) VGSO ±7 Drain current Peak drain current Tr2 Drain-source surrender vo.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching (0.30) 654 0.20+–00..0025 Unit: mm 0.10±0.02 1.20±0.05 1.60±0.05 (0.20) (0.20) / Product0ltiof0e.