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UNR5154 - Transistors

Key Features

  • s.
  • High forward current transfer ratio hFE.
  • Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
  • S-Mini type package, allowing automatic insertion through tape packing and magazine packing 1.25±0.10 2.1±0.1 5˚ 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ 0.9±0.1 0.9+0.2.
  • 0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors with built-in Resistor UNR5154 (UN5154) Silicon PNP epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 3 0.15+0.10 –0.05 For digital circuits ■ Features • High forward current transfer ratio hFE • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through tape packing and magazine packing 1.25±0.10 2.1±0.1 5˚ 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ 0.9±0.1 0.9+0.2 –0.