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Panasonic Electronic Components Datasheet

UNR5154 Datasheet

Transistors

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Transistors with built-in Resistor
UNR5154 (UN5154)
Silicon PNP epitaxial planar type
For digital circuits
Features
High forward current transfer ratio hFE
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
30
30
100
150
150
55 to +150
Unit
V
V
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Marking Symbol: EV
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R1 (10 k)
B
R2
(47 k)
C
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance
Resistance ratio
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
fT
R1
R1/R2
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −30 V, IE = 0
VCE = −30 V, IB = 0
VEB = −3 V, IC = 0
VCE = −10 V, IC = −5 mA
IC = −50 mA, IB = − 0.33 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 k
VCC = −5 V, VB = −2.5 V, RL = 1 k
VCB = −10 V, IE = 1 mA, f = 200 MHz
30
30
80
4.9
30%
0.5
80
10
0.213
0.1
0.5
0.1
1.2
0.2
+30%
V
V
µA
mA
V
V
V
MHz
k
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
Note) The part number in the parenthesis shows conventional part number.
SJH00023BED
1
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Panasonic Electronic Components Datasheet

UNR5154 Datasheet

Transistors

No Preview Available !

UNR5154
PT Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (°C)
200
IC VCE
Ta = 25°C
IB = −1.0 mA
150
– 0.9 mA
– 0.8 mA
– 0.7 mA
– 0.6 mA
– 0.5 mA
100
– 0.4 mA
– 0.3 mA
50 – 0.2 mA
– 0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
102
IC / IB = 10
10
1
101
25°C
Ta = 75°C
25°C
102
1
10 102 103
Collector current IC (mA)
hFE IC
300
VCE = −10 V
Ta = 75°C
250
25°C
200
25°C
150
100
50
0
1 10 102 103
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
5 Ta = 25°C
4
3
2
1
0
1 10 102
Collector-base voltage VCB (V)
IO VIN
104
VO = −5 V
Ta = 25°C
103
102
10
1
0.4
0.6 0.8 1.0 1.2
Input voltage VIN (V)
1.4
VIN IO
102
VO = − 0.2 V
Ta = 25°C
10
1
10 1
10 2
10 1
1 10
Output current IO (mA)
102
2 SJH00023BED
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Part Number UNR5154
Description Transistors
Maker Panasonic
PDF Download

UNR5154 Datasheet PDF






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