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Panasonic Electronic Components Datasheet

UNR511E Datasheet

Transistor

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Transistors with built-in Resistor
UNR511x Series (UN511x Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape/
magazine packing
Resistance by Part Number
Marking symbol
UNR5110 (UN5110)
6L
UNR5111 (UN5111)
6A
UNR5112 (UN5112)
6B
UNR5113 (UN5113)
6C
(R1)
47 k
10 k
22 k
47 k
UNR5114 (UN5114)
6D
10 k
UNR5115 (UN5115)
6E
10 k
UNR5116 (UN5116) 6F 4.7 k
UNR5117 (UN5117)
6H
22 k
UNR5118 (UN5118) 6I 0.51 k
UNR5119 (UN5119)
UNR511D (UN511D)
UNR511E (UN511E)
UNR511F (UN511F)
UNR511H (UN511H)
UNR511L (UN511L)
6K
6M
6N
6O
6P
6Q
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
UNR511M (UN511M)
EI
2.2 k
UNR511N (UN511N)
EW
4.7 k
UNR511T (UN511T)
EY
22 k
UNR511V (UN511V)
FC
2.2 k
UNR511Z (UN511Z)
FE
4.7 k
(R2)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
47 k
2.2 k
22 k
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
R1
B
R2
C
E
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
150
150
55 to +150
Unit
V
V
mA
mW
°C
°C
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00022BED
1
Free Datasheet http://www.datasheet4u.com/


Panasonic Electronic Components Datasheet

UNR511E Datasheet

Transistor

No Preview Available !

UNR511x Series
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR5110/5115/5116/5117
cutoff current UNR5113
VCBO
VCEO
ICBO
ICEO
IEBO
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
(Collector open) UNR5112/5114/511D/
511E/511M/511N/511T
UNR511Z
UNR5111
UNR511F/511H
UNR5119
UNR5118/511L/511V
Forward current UNR511V
transfer ratio UNR5118/511L
hFE VCE = 10 V, IC = 5 mA
UNR5119/511D/511F/511H
UNR5111
UNR5112/511E
UNR511Z
UNR5113/5114/511M
UNR511N/511T
UNR5110 */5115 */5116 */5117 *
Collector-emitter saturation voltage
UNR511V
Output voltage high-level
Output voltage low-level
UNR5113
UNR511D
UNR511E
Transition frequency
UNR5116
Input
UNR5118
resistance UNR5119
VCE(sat)
VOH
VOL
fT
R1
IC = −10 mA, IB = − 0.3 mA
IC = −10 mA, IB = −1.5 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 k
VCC = −5 V, VB = −2.5 V, RL = 1 k
VCC = −5 V, VB = −3.5 V, RL = 1 k
VCC = −5 V, VB = −10 V, RL = 1 k
VCC = −5 V, VB = −6 V, RL = 1 k
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 2 mA, f = 200 MHz
UNR511H/511M/511V
UNR5116/511F/511L
511N/511Z
UNR5111/5114/5115
UNR5112/5117/511T
UNR5110/5113/511D/511E
Resistance
ratio
UNR511M
UNR511N
R1/R2
UNR5118/5119
UNR511Z
Min Typ Max Unit
50 V
50 V
0.1 µA
0.5 µA
0.01 mA
0.1
0.2
0.4
0.5
1.0
1.5
2.0
6 20
20
30
35
60
60 200
80
80 400
160 460
0.25 V
4.9 V
0.2 V
80
150
30% 0.51 +30%
1.0
2.2
4.7
MHz
k
10
22
47
0.047
0.1
0.08 0.10 0.12
0.21
2 SJH00022BED
Free Datasheet http://www.datasheet4u.com/


Part Number UNR511E
Description Transistor
Maker Panasonic
PDF Download

UNR511E Datasheet PDF






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