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MTM232230LBF Datasheet

Silicon N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-12901
MTM232230LBF
Silicon N-channel MOS FET
For switching
Features
Low drain-source On-state resistance : RDS(on) typ = 20 m (VGS = 4.0 V)
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
Marking Symbol :BK
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
項目
記号
定格
単位
Drain-source Voltage
Gate-source Voltage
VDS
VGS
20
10
V
Drain current
ID 4.5
A
Peak drain current *1
Power dissipation *2
IDp 18
A
PD 500 mW
Channel temperature
Tch 150
C
Operating ambient temperature
Topr -40 to + 85
C
Storage Temperature Range
Tstg -55 to +150 C
Note) *1 Pulse width 10 s, Duty cycle 1 %
*2 Measuring on ceramic board at 40 38 0.1 mm
Absolute maximum rating PD without heat sink shall be made 150 mW.
Product Standards
MOS FET
MTM232230LBF
2.0
0.3
3
Unit : mm
0.15
12
(0.65)(0.65)
1.3
0.9
1. Gate
2. Source
3. Drain
Panasonic
JEITA
Code
SMini3-G1-B
SC-70
SOT-323
Internal Connection
(D)
3
12
(G) (S)
Pin Name
1. Gate
2. Source
3. Drain
Established : 2010-12-15
Revised : 2013-07-01
Page 1 of 6


Panasonic Electronic Components Datasheet

MTM232230LBF Datasheet

Silicon N-channel MOS FET

No Preview Available !

DReovcisNioon. . T3 T4-EA-12901
Product Standards
MOS FET
MTM232230LBF
Electrical Characteristics Ta = 25 C 3 C
項目
記号
条件
最小 標準 最大 単位
Drain-source surrender voltage
VDSS ID = 1 mA, VGS = 0 V
20
V
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
IDSS
IGSS
Vth
VDS = 20 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
ID = 1.0 mA, VDS = 10.0 V
1.0
10
0.4 0.85 1.3
A
A
V
Drain-source ON resistance *1
RDS(ON)1 ID = 1 A, VGS = 4 V
RDS(ON)2 ID = 0.6 A, VGS = 2.5 V
Forward transfer admittance *1
|Yfs| ID = 1 A, VDS = 10 V, f = 1 kHz
Short-circuit input capacitance (Common source) Ciss
20 28
26 40
3.5
1 200
m
S
Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0, f = 1 MHz
85
pF
Reverse transfer capacitance (Common source) Crss
80
Turn-on Time *2
ton
VDD = 10 V, VGS = 0 to 4 V
ID = 1 A
16 ns
Turn-off Time *2
toff
VDD = 10 V, VGS = 4 to 0 V
ID = 1 A
220 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test : Pulse width < 300 sDuty cycle < 2 %
*2 Turn-on and Turn-off test circuit
Established : 2010-12-15
Revised : 2013-07-01
Page 2 of 6


Part Number MTM232230LBF
Description Silicon N-channel MOS FET
Maker Panasonic
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