LNJ236W82RA
LNJ236W82RA is Hight Bright Surface Mounting Chip LED manufactured by Panasonic.
Light Emitting Diodes
This product plies with the Ro HS Directive (EU 2002/95/EC).
Forward current IF (m A) (planed maint Meaniantnecn Reeatlan Fytociprvee/e,wal Driumdsmacciiunonrtorntueeisnnntiaun Itne Fecdn(esiittmnyyc Alp)(ue,d%)eplsafnolleodwdiinsgc foontiurnu Preoddtyucptelidf,edciysccloentsitnaugee.d Dis Mcaionnttiennuaendtype)ce/
Hight Bright Surface Mounting Chip LED
ESS Type
- Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Power dissipation
PD 55
Forward current
IF 20
Pulse forward current
- IFP 60
Reverse voltage
VR 4
Operating ambient temperature
Topr
- 30 to +85
Storage temperature
Tstg
- 40 to +100
Note)
- : The condition of IFP is duty 10%, Pulse width 1 msec.
Unit m W m A m A V °C °C
- Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity
- 1
IO IF = 5 m A
Reverse current
IR VR = 4 V
Forward voltage
VF IF = 5 m A
Peak emission wavelength Dominant emission wavelength
- 2
λP IF...
