K2016 f-mos equivalent, silicon n-channel power f-mos.
q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltage drive(VGS= 4V) q Taping supply possi.
q DC-DC converter q Non-contact relay q Solenoid drive q Motor drive
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
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