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Panasonic Electronic Components Datasheet

DB2W31900L Datasheet

Silicon epitaxial planar type Schottky Barrier Diode

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DReovcisNioon. . T4 T4-EA-12641
DB2W31900L
Silicon epitaxial planar type
For rectification
Features
Low forward voltage VF
Low terminal capacitance Ct
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: 3W
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage (direct current)
Forward current (average) *1
Non-repetitive peak forward surge current *2
Junction temperature
VR
IF(AV)
IFSM
Tj
30
3
30
125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +125
Note) *1 For embedded alumina substrate (substrate size: 5 cm×5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
A
A
°C
°C
°C
Product Standards
Schottky Barrier Diode
DB2W31900L
1.6
2
Unit: mm
0.13
1
0.9
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Mini2-F3-B
SC-109B
Internal Connection
2
1
Established : 2010-06-22
Revised : 2013-05-29
Page 1 of 4


Panasonic Electronic Components Datasheet

DB2W31900L Datasheet

Silicon epitaxial planar type Schottky Barrier Diode

No Preview Available !

DReovcisNioon. . T4 T4-EA-12641
Product Standards
Schottky Barrier Diode
DB2W31900L
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 3 A
0.42 0.49
V
Reverse current
IR VR = 30 V
50 200 μA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
70 pF
Reverse recovery time *1
trr
IF = IR = 100 mA,
Irr = 0.1 × IR, RL = 100
23 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 × IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Established : 2010-06-22
Revised : 2013-05-29
Page 2 of 4


Part Number DB2W31900L
Description Silicon epitaxial planar type Schottky Barrier Diode
Maker Panasonic
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