900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Panasonic Electronic Components Datasheet

DB2232000L Datasheet

Silicon epitaxial planar type Schottky Barrier Diode

No Preview Available !

DReovcisNioon. . T3 T4-EA-12656
DB2232000L
Silicon epitaxial planar type
For rectification
Features
Low forward voltage VF
Small reverse leakage current
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: B5
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage
VR 30
Repetitive peak reverse voltage
VRRM
30
Peak forward current
IF(AV)
Non-repetitive peak forward surge current *1 IFSM
1.5
30
Junction temperature
Tj 125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +125
Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
°C
Product Standards
Schottky Barrier Diode
DB2232000L
1.6
2
Unit: mm
0.13
1
0.55
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Mini2-F4-B
SC-109D
SOD-123
Internal Connection
2
1
Established : 2010-07-22
Revised : 2013-04-19
Page 1 of 4


Panasonic Electronic Components Datasheet

DB2232000L Datasheet

Silicon epitaxial planar type Schottky Barrier Diode

No Preview Available !

DReovcisNioon. . T3 T4-EA-12656
Product Standards
Schottky Barrier Diode
DB2232000L
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Conditions
Min Typ Max Unit
VF1 IF = 0.5 A
0.38 V
Forward voltage
VF2 IF = 1.0 A
0.42 V
VF3 IF = 1.5 A
0.46 V
Reverse current
IR VR = 30 V
100 μA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
48 pF
Reverse recovery time *1
trr
IF = IR = 100 mA
Irr = 0.1×IR, RL = 100
16 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 × IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Established : 2010-07-22
Revised : 2013-04-19
Page 2 of 4


Part Number DB2232000L
Description Silicon epitaxial planar type Schottky Barrier Diode
Maker Panasonic
Total Page 5 Pages
PDF Download

DB2232000L Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 DB2232000L Silicon epitaxial planar type Schottky Barrier Diode
Panasonic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy