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D1330 - 2SD1330

Key Features

  • Low collector-emitter saturation voltage VCE(sat).
  • Low ON resistance Ron.
  • High forward current transfer ratio hFE.
  • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.0±0.2 2.4±0.2 0.45±0.05 1 R 0.9 R 0.7 www. DataSheet4U. com 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curren.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.0±0.2 2.4±0.2 0.45±0.05 1 R 0.9 R 0.7 www.DataSheet4U.com 1.0±0.