Low collector-emitter saturation voltage VCE(sat).
Low ON resistance Ron.
High forward current transfer ratio hFE.
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1
(1.0) 2.0±0.2 2.4±0.2
0.45±0.05 1
R 0.9 R 0.7
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1.0±0.1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curren.
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Transistors
2SD1330
Silicon NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC converter
(0.4)
Unit: mm
6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0)
■ Features
• Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.5±0.1
(1.0) 2.0±0.2 2.4±0.2
0.45±0.05 1
R 0.9 R 0.7
www.DataSheet4U.com
1.0±0.