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C5863 - Silicon NPN Transistor

Datasheet Summary

Features

  • 5˚.
  • High collector-emitter voltage (Base open) VCEO 1 2 (0.65).
  • High transition frequency fT (0.95) (0.95) 1.9±0.1 2.90+.
  • 00..0250 /.
  • Absolute Maximum Ratings Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 300 1.1.
  • +00..12 1.1.
  • +00..13 V c type Collector-emitter voltage (Base open) VCEO 300 0 to 0.1 V n d tage. ued Emitter-base voltage (Collector open) VEBO 7 V le s ontin Collector cur.

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Datasheet Details

Part number C5863
Manufacturer Panasonic
File Size 215.47 KB
Description Silicon NPN Transistor
Datasheet download datasheet C5863 Datasheet
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Full PDF Text Transcription

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Transistors 2SC5863 Silicon NPN epitaxial planar type For general amplification 0.40+–00..0150 3 Unit: mm 0.16+–00..0160 1.50–+00..0255 2.8–+00..32 0.4±0.2 ■ Features 5˚ • High collector-emitter voltage (Base open) VCEO 1 2 (0.65) • High transition frequency fT (0.95) (0.95) 1.9±0.1 2.90+–00..0250 / ■ Absolute Maximum Ratings Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 300 1.1–+00..12 1.1–+00..13 V c type Collector-emitter voltage (Base open) VCEO 300 0 to 0.1 V n d tage.
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