High collector-emitter voltage (Base open) VCEO
1
2
(0.65).
High transition frequency fT
(0.95) (0.95)
1.9±0.1 2.90+.
00..0250
/.
Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
300
1.1.
+00..12 1.1.
+00..13
V
c type Collector-emitter voltage (Base open) VCEO
300
0 to 0.1
V
n d tage. ued Emitter-base voltage (Collector open) VEBO
7
V
le s ontin Collector cur.
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Transistors
2SC5863
Silicon NPN epitaxial planar type
For general amplification
0.40+–00..0150 3
Unit: mm 0.16+–00..0160
1.50–+00..0255 2.8–+00..32
0.4±0.2
■ Features
5˚
• High collector-emitter voltage (Base open) VCEO
1
2
(0.65)
• High transition frequency fT
(0.95) (0.95)
1.9±0.1 2.90+–00..0250
/ ■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
300
1.1–+00..12 1.1–+00..13
V
c type Collector-emitter voltage (Base open) VCEO
300
0 to 0.1
V
n d tage.
C5863 Datasheet
