C5863 Description
Transistors 2SC5863 Silicon NPN epitaxial planar type For general amplification 0.40+ 00..0150 3 Unit: mm 0.16+ 00..0160 1.50 +00..0255 2.8 +00..32 0.4±0.2.
C5863 Key Features
- High collector-emitter voltage (Base open) VCEO
- High transition frequency fT