Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package
1 1.00±0.05
0.39+.
00..0013
0.15±0.05 0.05±0.03 0.35±0.01
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
/.
Absolute Maximum Ratings Ta = 25°C
0.50±0.05
0.25±0.05
0.25±0.05 1
Parameter
e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage. ued Emitter-base volta.
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Transistors
2SC5848
Silicon NPN epitaxial planar type
For general amplification Complementary to 2SA2079
Unit: mm
Features
3
2
0.60±0.05
High forward current transfer ratio hFE
Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package
1 1.00±0.05
0.39+−00..0013
0.15±0.05 0.05±0.03 0.35±0.01
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
/ Absolute Maximum Ratings Ta = 25°C
0.50±0.05
0.25±0.05
0.25±0.05 1
Parameter
e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage.