• Part: C5739
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 217.36 KB
Download C5739 Datasheet PDF
Panasonic
C5739
C5739 is Silicon NPN Transistor manufactured by Panasonic.
Features - High-speed switching (tstg: storage time/tf: fall time is short) - Low collector-emitter saturation voltage VCE(sat) - Superior forward current transfer ratio h FE linearity - TO-220D built-in: Excellent package with withstand voltage 5 k V / guaranteed 13.7±0.2 4.2±0.2 Solder Dip 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 e pe) - Absolute Maximum Ratings TC = 25°C c e. d ty Parameter Symbol Rating Unit n d stag tinue Collector-base voltage (Emitter open) VCBO V a e cycle iscon Collector-emitter voltage (Base open) VCEO V life d, d Emitter-base voltage (Collector open) VEBO V n u duct type Collector current A te tin Pro ed Peak collector current - ICP A four ntinu Collector power dissipation W ing isco Ta = 25°C 2.0 in n follow ed d Junction temperature Tj °C es plan Storage temperature Tstg - 55 to +150 °C a o includ type, Note) - : Non-repetitive peak collector current c tinued ance - Electrical Characteristics TC = 25°C ± 3°C M is con inten Parameter Symbol Conditions /Dis ma Collector-emitter voltage (Base open) D ance type, Collector-base cutoff current (Emitter open) ten ce Collector-emitter cutoff current (Base open) Main tenan Emitter-base cutoff current (Collector open) ain Forward current transfer ratio (planed m Collector-emitter saturation...