C5739
C5739 is Silicon NPN Transistor manufactured by Panasonic.
Features
- High-speed switching (tstg: storage time/tf: fall time is short)
- Low collector-emitter saturation voltage VCE(sat)
- Superior forward current transfer ratio h FE linearity
- TO-220D built-in: Excellent package with withstand voltage 5 k V
/ guaranteed
13.7±0.2 4.2±0.2
Solder Dip
1.4±0.2 1.6±0.2
0.8±0.1
2.6±0.1 0.55±0.15 e pe)
- Absolute Maximum Ratings TC = 25°C c e. d ty Parameter
Symbol Rating
Unit n d stag tinue Collector-base voltage (Emitter open) VCBO
V a e cycle iscon Collector-emitter voltage (Base open) VCEO
V life d, d Emitter-base voltage (Collector open) VEBO
V n u duct type Collector current
A te tin Pro ed Peak collector current
- ICP
A four ntinu Collector power dissipation
W ing isco Ta = 25°C
2.0 in n follow ed d Junction temperature
Tj
°C es plan Storage temperature
Tstg
- 55 to +150 °C a o includ type, Note)
- : Non-repetitive peak collector current c tinued ance
- Electrical Characteristics TC = 25°C ± 3°C
M is con inten Parameter
Symbol
Conditions
/Dis ma Collector-emitter voltage (Base open)
D ance type, Collector-base cutoff current (Emitter open) ten ce Collector-emitter cutoff current (Base open) Main tenan Emitter-base cutoff current (Collector open) ain Forward current transfer ratio (planed m Collector-emitter saturation...