High transition frequency fT
0.65 max. (1.0) 14.5±0.5.
Allowing supply with the radial taping.
Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
300
V
pe) Collector-emitter voltage (Base open) VCEO
300
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
7
V
sta tinu Collector current
IC
70
mA
a e cle con Peak collector curren.
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Transistors
2SC5419
Silicon NPN triple diffusion planar type
For low-frequency output amplification
6.9±0.1 0.7 4.0
Unit: mm
2.5±0.1 (0.8)
(0.5)
(1.0) (0.2)
4.5±0.1
■ Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
0.65 max.
(1.0) 14.5±0.5
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
300
V
pe) Collector-emitter voltage (Base open) VCEO
300
V
nc d ge.
C5419 Datasheet
