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C5419 - Silicon NPN Transistor

Datasheet Summary

Features

  • High collector-emitter voltage (Base open) VCEO.
  • High transition frequency fT 0.65 max. (1.0) 14.5±0.5.
  • Allowing supply with the radial taping.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base open) VCEO 300 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 V sta tinu Collector current IC 70 mA a e cle con Peak collector curren.

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Datasheet Details

Part number C5419
Manufacturer Panasonic
File Size 218.10 KB
Description Silicon NPN Transistor
Datasheet download datasheet C5419 Datasheet
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Full PDF Text Transcription

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Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.65 max. (1.0) 14.5±0.5 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base open) VCEO 300 V nc d ge.
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