φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
5°
1
2
3
2.0
1:Base 2:Collector 3:.
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Power Transistors
2SC5407
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C)
Ratings 1700 1700 600 5 20 15 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
10.0
s Features
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.
C5407 Datasheet
