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Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
9.9±0.3 φ3.2±0.1
2.9±0.2
q High collector to emitter VCEO q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
4.1±0.2 8.0±0.2 Solder Dip
/ s Absolute Maximum Ratings (TC=25˚C)
15.0±0.3
3.0±0.2
1.2±0.15 1.45±0.15
2.6±0.1 0.7±0.1
e ) Parameter
Symbol
Ratings
Unit
+0.5
13.7–0.2
c type Collector to base voltage
VCBO
500
V
n d tage.
C5034 Datasheet
