q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 36 16 3 0.5 0.3 1 150.
55 ~ +150
Unit V V V A A W ˚C ˚C
13.5±0.5lifecycleen
0.7±0.2dce/ 8.0±0.2 stage. 5.0±0.2.
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Productnnua 2.3±0.2
Transistor
2SC4767
Silicon NPN epitaxial planer type
For high-frequency power amplification
s Features
q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 36 16 3 0.5 0.3 1 150
–55 ~ +150
Unit V V V A A W ˚C ˚C
13.5±0.5lifecycleen
0.7±0.2dce/ 8.0±0.2 stage.
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123 2.54±0.
C4767 Datasheet
