C4767 - 2SC4767

Features

q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 36 16 3 0.5 0.3 1 150.
55 ~ +150 Unit V V V A A W ˚C ˚C 13.5±0.5lifecycleen 0.7±0.2dce/ 8.0±0.2 stage. 5.0±0.2.

C4767 2SC4767 by Panasonic - Datasheet Preview — Datasheet preview – C4767

Datasheet Details

Part number	C4767
Manufacturer	Panasonic
File Size	166.56 KB
Description	2SC4767
Datasheet	C4767 Datasheet
Additional preview pages of the C4767 datasheet.

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Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 36 16 3 0.5 0.3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 13.5±0.5lifecycleen 0.7±0.2dce/ 8.0±0.2 stage. 5.0±0.2 Unit: mm 4.0±0.2 0.7±0.1 1.27 +0.15 0.45 –0.1 +0.15 0.45 –0.1 1.27 123 2.54±0.

Published: Feb 28, 2017 |