Transistor
2SC4767
Silicon NPN epitaxial planer type
For high-frequency power amplification
s Features
q High transition frequency fT.
q Output of 0.6W is obtained in the VHF band (f=175MHz).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
36
16
3
0.5
0.3
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
High-frequency output
Overall efficiency
ICBO
hFE
VCE(sat)
fT
Cob
PO*
η
Conditions
min typ max Unit
VCB = 20V, IE = 0
VCE = 13.5V, IC = 100mA**
10 µA
50
IC = 100mA, IB = 10mA
1V
VCB = 10V, IE = –100mA, f = 200MHz 1.5
2
GHz
VCB = 10V, IE = 0, f = 1MHz
4 8 pF
VCC = 13.5V, Pi = 0.03W, f = 175MHz 0.6
0.9
W
VCC = 13.5V, Pi = 0.03W, f = 175MHz
60
%
*Refer to the PO measurment circuit ** Pulse measurement
1
