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Panasonic Electronic Components Datasheet

C4576 Datasheet

Power Transistors

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Power Transistors
2SC4576
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCER
VCEO
VEBO
ICP
IC
PC
1400
1400
700
5
1.0
0.3
20
1.4
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
W
˚C
˚C
10.5±0.5
9.5±0.2
8.0±0.2
4.5±0.2
1.4±0.1
φ3.7±0.2
5.08±0.5
0.8±0.1
2.54±0.3
2.5±0.2
0.6±0.1
123
1:Base
2:Collector
3:Emitter
TO–220 Package(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
VCER
VEBO
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 1100V, IE = 0
VEB = 4V, IC = 0
IC = 1mA, IB = 0
IC = 1mA, RBE = 100
IE = 1mA, IC = 0
VCE = 5V, IC = 30mA
IC = 60mA, IB = 6mA
IC = 60mA, IB = 6mA
VCE = 10V, IC = 30mA, f = 1MHz
IC = 150mA,
IB1 = 15mA, IB2 = –30mA,
VCC = 250V
min typ max Unit
10 µA
10 µA
700 V
1400
V
5V
10 40
2V
2V
12 MHz
2 µs
3 µs
1 µs
1


Panasonic Electronic Components Datasheet

C4576 Datasheet

Power Transistors

No Preview Available !

Power Transistors
40
30
(1)
20
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=1.4W)
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
1 TC=–25˚C
0.3 100˚C 25˚C
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10 VCC=250V
TC=25˚C
3
tstg ton
1
0.3 tf
0.1
0.03
0.01
0
0.2 0.4 0.6 0.8
Collector current IC (A)
IC — VCE
120
TC=25˚C
100 IB=5mA
4mA
80 3mA
2mA
60
40
1mA
20
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC4576
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1
0.03
TC=100˚C
25˚C
–25˚C
0.01
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
1000
300
hFE — IC
VCE=5V
100
25˚C
TC=100˚C
30
–25˚C
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Area of safe operation (ASO)
10
3
1 ICP
Non repetitive pulse
TC=25˚C
t=1ms
0.3
IC
0.1
10ms
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C4576
Description Power Transistors
Maker Panasonic
PDF Download

C4576 Datasheet PDF






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