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Panasonic Electronic Components Datasheet

C4152 Datasheet

2SC4152

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Power Transistors
2SC4152
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCER
VCEO
VEBO
ICP
IC
PC
1400
1400
700
5
1.0
0.3
20
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
ICBO
IEBO
VCER
VCEO
VCB = 1100V, IE = 0
VEB = 4V, IC = 0
IC = 1mA, RBE = 100
IC = 1mA, IB = 0
1400
700
10 µA
10 µA
V
V
Emitter to base voltage
VEBO
IE = 1mA, IC = 0
5
V
Forward current transfer ratio
hFE
VCE = 5V, IC = 30mA
10 40
Collector to emitter saturation voltage VCE(sat)
IC = 60mA, IB = 6mA
2V
Base to emitter saturation voltage VBE(sat)
IC = 60mA, IB = 6mA
2V
Transition frequency
fT VCE = 10V, IC = 30mA, f = 1MHz
12 MHz
Collector output capacitance
Turn-on time
Storage time
Fall time
Cob
ton
tstg
tf
VCB = 100V, IE = 0, f = 1MHz
IC = 0.15A, IB1 = 15mA, IB2 = –30mA,
VCC = 250V
6 pF
2 µs
3 µs
1 µs
1


Panasonic Electronic Components Datasheet

C4152 Datasheet

2SC4152

No Preview Available !

Power Transistors
40
30
(1)
20
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
1 TC=–25˚C
100˚C
0.3 25˚C
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
120
TC=25˚C
100 IB=5mA
4mA
80 3mA
2mA
60
40
1mA
20
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC4152
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1
0.03
TC=100˚C
25˚C
–25˚C
0.01
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
1000
300
hFE — IC
VCE=5V
100
25˚C
TC=100˚C
30
–25˚C
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10 VCC=250V
TC=25˚C
3
tstg ton
1
0.3 tf
0.1
0.03
0.01
0
0.2 0.4 0.6 0.8
Collector current IC (A)
Area of safe operation (ASO)
10
Non repetitive pulse
TC=25˚C
3
1 t=1ms
0.3
10ms
0.1
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C4152
Description 2SC4152
Maker Panasonic
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C4152 Datasheet PDF






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