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Panasonic Electronic Components Datasheet

C3704 Datasheet

2SC3704

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Transistors
2SC3704
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Features
Low noise figure NF
High forward transfer gain S21e2
High transition frequency fT
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
www.DataSheept4aUck.cinogm
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
10
2
80
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 2W
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0
Forward current transfer ratio
hFE1 VCE = 8 V, IC = 20 mA
hFE2 VCE = 1 V, IC = 3 mA
Transition frequency
fT VCE = 8 V, IC = 20 mA, f = 0.8 GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
1 µA
1 µA
50 150 300
80 280
6 GHz
0.7 1.2
pF
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2
GUM
NF
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCE = 8 V, IC = 7 mA, f = 0.8 GHz
13
14
1.0 1.7
dB
dB
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00134BED
1


Panasonic Electronic Components Datasheet

C3704 Datasheet

2SC3704

No Preview Available !

2SC3704
PC Ta
240
200
160
120
80
40
0
0 40 80 120 160
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
60
IB = 400 µA
Ta = 25°C
350 µA
50
300 µA
40 250 µA
200 µA
30
150 µA
20 100 µA
10 50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
120
VCE = 8 V
100
25°C
80
Ta = 75°C
25°C
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C, 25°C, 25°C
0.1
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
600
VCE = 8 V
500
400
Ta = 75°C
300
25°C
200
25°C
100
0
0.1 1 10 100
Collector current IC (mA)
fT IC
12 VCE = 8 V
f = 0.8 GHz
10 Ta = 25°C
8
6
4
2
0
0.1 1 10 100
Collector current IC (mA)
Cob VCB
2.4 IE = 0
f = 1 MHz
2.0 Ta = 25°C
1.6
1.2
0.8
0.4
0
0.1 1 10 100
Collector-base voltage VCB (V)
GUM IC
24 VCE = 8 V
f = 0.8 GHz
20 Ta = 25°C
16
12
8
4
0
0.1 1 10 100
Collector current IC (mA)
NF IC
6
VCE = 8 V
(Rg = 50 )
5 f = 800 MHz
Ta = 25°C
4
3
2
1
0
0.1 1 10 100
Collector current IC (mA)
2 SJC00134BED


Part Number C3704
Description 2SC3704
Maker Panasonic
PDF Download

C3704 Datasheet PDF






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