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C3507 - 2SC3507

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Overview

Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.

Key Features

  • 11.0±0.2 (3.2).
  • High-speed switching 21.0±0.5 15.0±0.2.
  • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1.
  • Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e ) Collector-base voltage (Emitter open) VCBO 1 000 V c type Co.

More Datasheets from Panasonic

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