Datasheet4U Logo Datasheet4U.com

C3315 - Silicon NPN Transistor

Features

  • br>.
  • Optimum for high-density mounting.
  • Allowing supply with the radial taping 0.75 max.
  • Optimum for RF amplification of FM/AM radios.
  • High transition frequency fT /.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 V a e cle con Collector current IC 15 mA.

📥 Download Datasheet

Datasheet Details

Part number C3315
Manufacturer Panasonic
File Size 249.12 KB
Description Silicon NPN Transistor
Datasheet download datasheet C3315 Datasheet

📁 Similar Datasheet

  • C331 - Printer User Guide (OKI)
  • C3310 - FCXO (Vectron International)
  • C3318 - 2SC3318 (Fuji Electric)
  • C3300 - 2SC3300 (SavantIC)
  • C3302 - 2SC3302 (Toshiba Semiconductor)
  • C3303 - 2SC3303 (Toshiba)
  • C3306 - 2SC3306 (Toshiba Semiconductor)
  • C3306 - Silicon NPN Power Transistor (INCHANGE)
  • C3307 - 2SC3307 (Toshiba)
  • C330Cxx - Inductors for Switching Power Supplies (NEC Tokin)
Other Datasheets by Panasonic
  • C3311 - Silicon NPN Transistor
  • C3312 - Silicon NPN Transistor
  • C3313 - Silicon NPN Transistor
  • C3354 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping 0.75 max. • Optimum for RF amplification of FM/AM radios • High transition frequency fT / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 V a e cle con Collector current IC 15 mA lifecy , dis Collector power dissipation PC 300 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 0.45+–00..
Published: |