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Transistors
2SC3313
Silicon NPN epitaxial planar type
For high-frequency amplification
4.0±0.2
2.0±0.2
Unit: mm
15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6
■ Features
• Optimum for high-density mounting • Allowing supply with the radial taping
0.75 max.
• Optimum for RF amplification of FM/AM radios
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
V
a e cle con Collector current
IC
30
mA
lifecy , dis Collector power dissipation
PC
300
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
0.45+–00..1200
(2.5) (2.5)
123
0.
C3313 Datasheet
