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C3312 - Silicon NPN Transistor

Features

  • .75 max.
  • Optimum for high-density mounting.
  • Allowing supply with the radial taping.
  • Low noise voltage NV.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collecto.

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Datasheet Details

Part number C3312
Manufacturer Panasonic
File Size 218.49 KB
Description Silicon NPN Transistor
Datasheet download datasheet C3312 Datasheet

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Full PDF Text Transcription

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Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge.
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